Characteristic Making of Ba0.4Sr0.6TiO3 Thin Film Nanoparticles

Presently, the research on thin films is essentially useful in world of science and technology. Therefore, this study aims to explore Barium Strontium Titanate (BST) as basis making dynamic random access memory (DRAM). This DRAM technology produces small cells that have faster operations, lower energy, longer data storage period, are found havemade up nanoparticles (Ba0.4Sr0.6TiO3; BST). BST applications form capacitors can be used gas sensors, temperature microwave phase shifters, tunable filters, oscillators, infrared etc.The main component was showed by sol-gel method, device structure constituted Si/SiO2/RuO2/TiO2 /Ba0.4Sr0.6TiO3/Al. All samples were annealed at 400, 450, 500, 550, 600, 650 700 ℃ for 60 min. The sample see crystalline sample.The sol gel method chosen process Ba0.4Sr0.6TiO3 because easier cheaper than other techniques. film characterized optical electrical properties. results a rise annealing increased crystalline, grain size, thickness surface roughness sample. characterization carried out (Si/SiO2/RuO2/TiO2/Ba0.4Sr0.6TiO3/Al) order examine properties, including current density dielectric features. At ℃, best value, with absorption peak wavelength 688 nm. And also, constant (εr) 2,500, capacitance (C) 22.10 nF, dense alternating (ρau) 2.54×104 Ω.m, conductance (σau) 1.20×10-2 1/Ω.m, 9.85×10 -5 A.cm-2 0.5 V. capacitor very good an sensor.
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 (DRAM)
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